| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM514260CLTT-6 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 2 |
HM514260CLTT-6R |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 3 |
HM514260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 4 |
HM514260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 5 |
HM514400CLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 6 |
HM514400CLTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 7 |
HM514400CLTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 8 |
HM514800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 9 |
HM514800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 10 |
HM514800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 11 |
HM51S4260CLTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 12 |
HM51S4260CLTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13 |
HM51S4260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 14 |
HM51S4260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 15 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 16 |
HM51S4800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 17 |
HM51S4800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 18 |
HM6216255HCLTT-10 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
| 19 |
HM6216255HCLTT-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
| 20 |
HM6216255HCTT/HCLTT |
High-Speed SRAMs |
Hitachi Semiconductor |
| 21 |
HM628512CLTT-5 |
4 M SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
| 22 |
HM628512CLTT-5SL |
4 M SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
| 23 |
HM628512CLTT-5SL |
Memory>Low Power SRAM |
Renesas |
| 24 |
HM628512CLTT-7 |
4 M SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
| 25 |
HM628512CLTT-7 |
Memory>Low Power SRAM |
Renesas |
| 26 |
HM628512CLTT-7SL |
4 M SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
| 27 |
HM628512CLTT/CLTT-XXSL |
Low Power SRAMs |
Hitachi Semiconductor |
| 28 |
HM628512CLTT/CLTT-XXSL |
Low Power SRAMs |
Hitachi Semiconductor |
| 29 |
HM628512CLTTI |
Low Power SRAMs |
Hitachi Semiconductor |
| 30 |
HM628512CLTTI-5 |
Memory>Low Power SRAM |
Renesas |
| | | |
