No. |
Part Name |
Description |
Manufacturer |
1 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
2 |
MAX808LCPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
3 |
MAX808LCSA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
4 |
MAX808LEPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
5 |
MAX808LESA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
6 |
MAX808LMJA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
7 |
MAX808MCPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
8 |
MAX808MCSA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
9 |
MAX808MEPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
10 |
MAX808MESA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
11 |
MAX808MMJA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
12 |
MAX808NCPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
13 |
MAX808NCSA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
14 |
MAX808NEPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
15 |
MAX808NESA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
16 |
MAX808NMJA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
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