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Datasheets for COLLECT

Datasheets found :: 3354
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 2N1073 PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V Motorola
2 2N1073A PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V Motorola
3 2N1073B PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V Motorola
4 2N1906 Germanium Diffused Collector PNP, typical application High Power Amplifier SGS-ATES
5 2N2193A NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current ITT Semiconductors
6 2N2297 NPN Transistor Medium Power, high collector current Amelco Semiconductor
7 2N2297 NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current ITT Semiconductors
8 2N2481 NPN silicon annular transistor, collector connected to case Motorola
9 2N3375 Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting Philips
10 2N3744 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
11 2N3745 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
12 2N3746 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
13 2N3747 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
14 2N3748 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
15 2N3749 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
16 2N3750 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
17 2N3751 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
18 2N3752 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
19 2N3878 HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS General Electric Solid State
20 2N3879 High speed, epitaxial collector silicon N-P-N planar transistor. General Electric Solid State
21 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
22 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
23 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
24 2N3904 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
25 2N3904 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
26 2N3904 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
27 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
28 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
29 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
30 2N3906 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD


Datasheets found :: 3354
Page: | 1 | 2 | 3 | 4 | 5 |



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