| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CR04 |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2 |
CR043 |
Diode Current Reg. 100V 0.473mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 3 |
CR047 |
Diode Current Reg. 100V 0.517mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 4 |
CR04AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 5 |
CR04AM |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 6 |
CR04AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7 |
CR04AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8 |
CR04AM400-12 |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 9 |
CR04AM400-8 |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 10 |
CR04AM600-12 |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 11 |
CR04AM600-8 |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| | | |
