| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 4 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 6 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 7 |
BCR08PN |
Digital Transistors - SOT363 package |
Infineon |
| 8 |
BCR08PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
| 9 |
CR08 |
Surface Mount/ Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 10 |
CR0800SA |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 11 |
CR0800SB |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 12 |
CR0800SC |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 13 |
CR082 |
Diode Current Reg. 100V 0.902mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 14 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 15 |
CR08AS |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 16 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 17 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 18 |
CR08AS400-12 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 19 |
CR08AS400-8 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 20 |
CR08AS600-12 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 21 |
CR08AS600-8 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 22 |
MCR08B |
Sensiteve Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 23 |
MCR08BT1 |
SCR 0.8 AMPERE RMS 200 thru 600 Volts |
Motorola |
| 24 |
MCR08BT1 |
Logic level thyristor |
NXP Semiconductors |
| 25 |
MCR08BT1 |
Sensiteve Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 26 |
MCR08BT1 |
MCR08BT1; Thyristor; logic level |
Philips |
| 27 |
MCR08BT1 |
MCR08BT1; Thyristor; logic level |
Philips |
| 28 |
MCR08BT1-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors |
ON Semiconductor |
| 29 |
MCR08M |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 30 |
MCR08MT1 |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| | | |
