No. |
Part Name |
Description |
Manufacturer |
1 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
2 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
4 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
6 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
7 |
BCR08PN |
Digital Transistors - SOT363 package |
Infineon |
8 |
BCR08PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
9 |
CR08 |
Surface Mount/ Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
10 |
CR0800SA |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
11 |
CR0800SB |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
12 |
CR0800SC |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
13 |
CR082 |
Diode Current Reg. 100V 0.902mA 2-Pin TO-18 |
New Jersey Semiconductor |
14 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
15 |
CR08AS |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
16 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
17 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
18 |
CR08AS400-12 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
19 |
CR08AS400-8 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
20 |
CR08AS600-12 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
21 |
CR08AS600-8 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
22 |
MCR08B |
Sensiteve Gate Silicon Controlled Rectifier |
ON Semiconductor |
23 |
MCR08BT1 |
SCR 0.8 AMPERE RMS 200 thru 600 Volts |
Motorola |
24 |
MCR08BT1 |
Logic level thyristor |
NXP Semiconductors |
25 |
MCR08BT1 |
Sensiteve Gate Silicon Controlled Rectifier |
ON Semiconductor |
26 |
MCR08BT1 |
MCR08BT1; Thyristor; logic level |
Philips |
27 |
MCR08BT1 |
MCR08BT1; Thyristor; logic level |
Philips |
28 |
MCR08BT1-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors |
ON Semiconductor |
29 |
MCR08DT1 |
Silicon Controlled Rectifier 0.8 ampere RMS, 400V |
Motorola |
30 |
MCR08M |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
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