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Datasheets for CR12

Datasheets found :: 136
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 BCR12 MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
2 BCR129 Digital Transistors - R1=10 kOhm Infineon
3 BCR129 NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) Siemens
4 BCR129F Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package Infineon
5 BCR129FE6327 Digital Transistors - R1= 10 kOhm Infineon
6 BCR129L3 Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package Infineon
7 BCR129L3E6327 Digital Transistors - R1= 10 kOhm Infineon
8 BCR129S Digital Transistors - R1= 10 kOhm SOT363 Infineon
9 BCR129S NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) Siemens
10 BCR129T Digital Transistors - R1= 10 kOhm Infineon
11 BCR129W Single digital (complex) AF-Transistors in SOT323 package Infineon
12 BCR129WE6327 Digital Transistors - R1= 10 kOhm Infineon
13 BCR12CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
14 BCR12CM Triac 12 Amperes/400-600 Volts Powerex Power Semiconductors
15 BCR12CM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
16 BCR12CM-12 Triac 12 Amperes/400-600 Volts Powerex Power Semiconductors
17 BCR12CM-12L Triac 12 Amperes/400-600 Volts Powerex Power Semiconductors
18 BCR12CM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
19 BCR12CM-8 Triac 12 Amperes/400-600 Volts Powerex Power Semiconductors
20 BCR12CM-8L Triac 12 Amperes/400-600 Volts Powerex Power Semiconductors
21 BCR12CS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
22 BCR12CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Powerex Power Semiconductors
23 BCR12CS-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
24 BCR12CS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
25 BCR12KM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
26 BCR12PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
27 BCR12PM Isolated Triac 12 Amperes/400-600 Volts Powerex Power Semiconductors
28 BCR12PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
29 BCR12PM-12 Isolated Triac 12 Amperes/400-600 Volts Powerex Power Semiconductors
30 BCR12PM-12L Isolated Triac 12 Amperes/400-600 Volts Powerex Power Semiconductors


Datasheets found :: 136
Page: | 1 | 2 | 3 | 4 | 5 |



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