| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2 |
BCR129 |
Digital Transistors - R1=10 kOhm |
Infineon |
| 3 |
BCR129 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 4 |
BCR129F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 5 |
BCR129FE6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
| 6 |
BCR129L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 7 |
BCR129L3E6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
| 8 |
BCR129S |
Digital Transistors - R1= 10 kOhm SOT363 |
Infineon |
| 9 |
BCR129S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 10 |
BCR129T |
Digital Transistors - R1= 10 kOhm |
Infineon |
| 11 |
BCR129W |
Single digital (complex) AF-Transistors in SOT323 package |
Infineon |
| 12 |
BCR129WE6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
| 13 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 14 |
BCR12CM |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 15 |
BCR12CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 16 |
BCR12CM-12 |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 17 |
BCR12CM-12L |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 18 |
BCR12CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 19 |
BCR12CM-8 |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 20 |
BCR12CM-8L |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 21 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 22 |
BCR12CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 23 |
BCR12CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 24 |
BCR12CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 25 |
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 26 |
BCR12PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 27 |
BCR12PM |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 28 |
BCR12PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 29 |
BCR12PM-12 |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 30 |
BCR12PM-12L |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| | | |
