| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0805CS-6N8E |
WIRE WOUND CHIP INDUCTOR CERAMIC |
Delta |
| 2 |
0805CS-6N8E_PS |
WIRE WOUND CHIP INDUCTOR CERAMIC |
Delta |
| 3 |
HM514400CS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 4 |
KM416C4000CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
| 5 |
KM416C4004CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 60ns |
Samsung Electronic |
| 6 |
KM416C4100CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 7 |
KM416C4104CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 8 |
KM416V4000CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 9 |
KM416V4004CS-60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 10 |
KM416V4100CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 11 |
KM416V4104CS-60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 12 |
KM44C4000CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 13 |
KM44C4003CS-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 14 |
KM44C4005CS-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 15 |
KM44C4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 16 |
KM44C4103CS-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 17 |
KM44C4105CS-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 18 |
KM44V4000CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 19 |
KM44V4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 20 |
KM48V8004CS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 21 |
KM48V8104CS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 22 |
ML4861CS-6 |
Low Voltage Boost Regulator |
Micro Linear |
| 23 |
ML6426CS-6 |
High Bandwidth Triple Video Filters with Buffered Outputs for RGB or YUV |
Fairchild Semiconductor |
| 24 |
ML6426CS-6 |
High Bandwidth Triple Video Filters with Buffered Outputs for RGB or YUV |
Micro Linear |
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