| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CSB772 |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 |
Continental Device India Limited |
| 2 |
CSB772E |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E |
Continental Device India Limited |
| 3 |
CSB772P |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P |
Continental Device India Limited |
| 4 |
CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q |
Continental Device India Limited |
| 5 |
CSB772R |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R |
Continental Device India Limited |
| 6 |
CSB834 |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880 |
Continental Device India Limited |
| 7 |
CSB834O |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O |
Continental Device India Limited |
| 8 |
CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y |
Continental Device India Limited |
| 9 |
CSD880 |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 |
Continental Device India Limited |
| 10 |
CSD880GR |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR |
Continental Device India Limited |
| 11 |
CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O |
Continental Device India Limited |
| 12 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 13 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 14 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 15 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 16 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 17 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 18 |
CSD88537ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 19 |
CSD88537ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 20 |
CSD88537NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 21 |
CSD88537NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 22 |
CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 23 |
CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 24 |
CSD88539NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 25 |
CSD88539NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
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