Datasheets for CT-6

Datasheets found :: 33 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	AZ941-1CT-6D	MINIATURE PC BOARD RELAY	ZETTLER electronics
2	AZ941-1CT-6DE	MINIATURE PC BOARD RELAY	ZETTLER electronics
3	AZ942-1CT-6D	16 AMP MINIATURE PC BOARD RELAY	ZETTLER electronics
4	AZ942-1CT-6DE	16 AMP MINIATURE PC BOARD RELAY	ZETTLER electronics
5	GM71C17400CT-6	4,194,304 words x 4 bit CMOS dynamic RAM, 60ns	Hynix Semiconductor
6	GM71C17403CT-6	CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns	Hynix Semiconductor
7	GM71C17800CT-6	CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns	Hynix Semiconductor
8	GM71C18163CT-6	1,048,576 words x 16 bit CMOS DRAM, 60ns	Hynix Semiconductor
9	GM71CS17400CT-6	4,194,304 words x 4 bit CMOS dynamic RAM, 60ns	Hynix Semiconductor
10	GM71CS17403CT-6	CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns	Hynix Semiconductor
11	GM71CS17800CT-6	CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns	Hynix Semiconductor
12	GM71V17403CT-6	CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns	Hynix Semiconductor
13	GM71VS17403CT-6	CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns	Hynix Semiconductor
14	HY57V281620HCT-6	128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz	Hynix Semiconductor
15	HY57V281620HCT-6I	128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz	Hynix Semiconductor
16	HY57V643220CT-6	4 Banks x 512K x 32Bit Synchronous DRAM	Hynix Semiconductor
17	HYB25D128160CT-6	128Mbit Double Data Rate (DDR) Components	Infineon
18	HYB25D128800CT-6	128 Mbit Double Data Rate SDRAM	Infineon
19	HYB25D256160CT-6	256Mbit Double Data Rate (DDR) Components	Infineon
20	HYB25D256800CT-6	256Mbit Double Data Rate (DDR) Components	Infineon
21	HYB39S16160CT-6	SDRAM 1M x 16 Bit	Infineon
22	HYB39S16160CT-6	1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications	Siemens
23	KM416C1000CT-6	1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns	Samsung Electronic
24	KM416C1004CT-6	5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung Electronic
25	KM416C1200CT-6	1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns	Samsung Electronic
26	KM416C1204CT-6	5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung Electronic
27	KM416C1204CT-60	1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms	Samsung Electronic
28	KM416V1000CT-6	1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns	Samsung Electronic
29	KM416V1004CT-6	3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung Electronic
30	KM416V1004CT-60	1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms	Samsung Electronic

Datasheets found :: 33 Page: | 1 | 2 |