No. |
Part Name |
Description |
Manufacturer |
1 |
CTL-12S |
Ultra Fast Recovery Diode |
etc |
2 |
CTL-21S |
Ultra Fast Recovery Diode |
etc |
3 |
CTL-22S |
Ultra Fast Recovery Diode |
etc |
4 |
CTL-24 |
C. T. LIGHT |
etc |
5 |
CTL-31S |
Ultra Fast Recovery Diode |
etc |
6 |
CTL-32S |
Ultra Fast Recovery Diode |
etc |
7 |
CTL-6-L |
CTL-6-L |
etc |
8 |
CTL-6-L |
CTL-6-L |
etc |
9 |
CTL-6-W |
C. T. LIGHT |
etc |
10 |
HCTL-1100 |
General Purpose Motion Control ICs |
Agilent (Hewlett-Packard) |
11 |
HCTL-1100-PLC |
General purpose motion control IC |
Agilent (Hewlett-Packard) |
12 |
HCTL-2000 |
Quadrature Decoder/Counter Interface ICs |
Agilent (Hewlett-Packard) |
13 |
HCTL-2016 |
Quadrature Decoder/Counter Interface ICs |
Agilent (Hewlett-Packard) |
14 |
HCTL-2020 |
Quadrature Decoder/Counter Interface ICs |
Agilent (Hewlett-Packard) |
15 |
HCTL-2022 |
HCTL-2022 · Quadrature Decoder IC |
Agilent (Hewlett-Packard) |
16 |
HCTL-2022 |
HCTL-2022 · Quadrature Decoder IC |
Agilent (Hewlett-Packard) |
17 |
HCTL-2032 |
HCTL-2032 · Quadrature Decoder IC |
Agilent (Hewlett-Packard) |
18 |
HCTL-2032 |
HCTL-2032 · Quadrature Decoder IC |
Agilent (Hewlett-Packard) |
19 |
HCTL-2032-SC |
HCTL-2032-SC · Quadrature Decoder IC |
Agilent (Hewlett-Packard) |
20 |
HCTL-2032-SC |
HCTL-2032-SC · Quadrature Decoder IC |
Agilent (Hewlett-Packard) |
21 |
HYB25D128800CTL-6 |
128 Mbit Double Data Rate SDRAM |
Infineon |
22 |
HYB25D256800CTL-6 |
256 Mbit Double Data Rate SDRAM |
Infineon |
23 |
HYB39S128160CTL-75 |
128-MBit Synchronous DRAM |
Infineon |
24 |
HYB39S128160CTL-8 |
128-MBit Synchronous DRAM |
Infineon |
25 |
HYB39S64800CTL-8 |
64M SDRAM Component |
Infineon |
26 |
KM416C1000CTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
27 |
KM416C1000CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
28 |
KM416C1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
29 |
KM416C1004CTL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
30 |
KM416C1004CTL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
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