| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
| 2 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
| 3 |
5962-JM38510_55501BZA |
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 4 |
5962-JM38510_55501BZC |
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 5 |
5962-JM38510_55501BZX |
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 6 |
74F401 |
Cyclic Redundancy Check Generator/Checker |
National Semiconductor |
| 7 |
A42L2604S-45L |
45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
| 8 |
A42L2604S-50L |
50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
| 9 |
A42L2604V-45L |
45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
| 10 |
A42L2604V-45LU |
45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
| 11 |
A42L2604V-50L |
50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
| 12 |
A42L2604V-50LU |
50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
| 13 |
A43L2616V-6PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM |
AMIC Technology |
| 14 |
A43L2616V-7PH |
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM |
AMIC Technology |
| 15 |
A43L8316AV-5 |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 16 |
A43L8316AV-5.5 |
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 17 |
A43L8316AV-6 |
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 18 |
A43L8316AV-7 |
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 19 |
A67L7332E-4 |
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 20 |
A67L7332E-4.2 |
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 21 |
A67L7332E-4.5 |
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 22 |
A67L7332E-4.5 |
Cycle time:8.50ns;accesstime:4.5ns 128K x 32 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 23 |
A67L7336E-4 |
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 24 |
A67L7336E-4.2 |
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 25 |
A67L7336E-4.5 |
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 26 |
A67L7336E-4.5 |
Cycle time:8.5ns;accesstime:4.5ns 128K x 36 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 27 |
A67L8316E-4 |
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 28 |
A67L8316E-4.2 |
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 29 |
A67L8316E-4.5 |
Cycle time:8.5ns;accesstime:4.5ns 256K x 16 LVTTL, pipelined DBA SRAM |
AMIC Technology |
| 30 |
A67L8316E-4.5 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM |
AMIC Technology |
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