No. |
Part Name |
Description |
Manufacturer |
1 |
100115 |
Low Skew Quad Driver |
National Semiconductor |
2 |
100313 |
Low Power Quad Driver |
Fairchild Semiconductor |
3 |
100313 |
Low Power Quad Driver |
National Semiconductor |
4 |
100313CW |
Low Power Quad Driver |
Fairchild Semiconductor |
5 |
100313D |
Low Power Quad Driver |
National Semiconductor |
6 |
100313DC |
Low Power Quad Driver |
Fairchild Semiconductor |
7 |
100313F |
Low Power Quad Driver |
National Semiconductor |
8 |
100313FM-MLS |
Low Power Quad Driver |
National Semiconductor |
9 |
100313FM-MLS |
Low Power Quad Driver |
National Semiconductor |
10 |
100313PC |
Low Power Quad Driver |
Fairchild Semiconductor |
11 |
100313QC |
Low Power Quad Driver |
Fairchild Semiconductor |
12 |
100313QCX |
Low Power Quad Driver |
Fairchild Semiconductor |
13 |
100313QI |
Low Power Quad Driver |
Fairchild Semiconductor |
14 |
100313QIX |
Low Power Quad Driver |
Fairchild Semiconductor |
15 |
100313SC |
Low Power Quad Driver |
Fairchild Semiconductor |
16 |
100313SCX |
Low Power Quad Driver |
Fairchild Semiconductor |
17 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
18 |
1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
19 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
20 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
21 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
22 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
23 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
24 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
25 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
26 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
27 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
28 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
29 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
30 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
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