| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 3 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 4 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 5 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 6 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 7 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 8 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 9 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 10 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 11 |
183T2 |
180V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 12 |
184T2 |
200V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 13 |
185T2 |
250V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 14 |
1N5614 |
GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER |
General Semiconductor |
| 15 |
1N5614GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 200V |
Vishay |
| 16 |
1N5616 |
GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER |
General Semiconductor |
| 17 |
1N5616GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 400V |
Vishay |
| 18 |
1N5618 |
GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER |
General Semiconductor |
| 19 |
1N5618GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 20 |
1N5620 |
GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER |
General Semiconductor |
| 21 |
1N5620GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 800V |
Vishay |
| 22 |
1N5622 |
GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER |
General Semiconductor |
| 23 |
1N5622GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 1000V |
Vishay |
| 24 |
2017 |
28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid |
Micropac Industries |
| 25 |
2032 |
28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid |
Micropac Industries |
| 26 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 27 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 28 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 29 |
2N2171 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 30 |
2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR |
SemeLAB |
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