| No. |
Part Name |
Description |
Manufacturer |
| 1 |
11016 |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 2 |
300190-9 |
Bulk Metal Foil Technology Molded Resistor Networks |
Vishay |
| 3 |
300210-12 |
Bulk Metal Foil Technology Molded Resistor Networks |
Vishay |
| 4 |
308A |
Commercial Discrete Wirewound Resistors |
Vishay |
| 5 |
4302H |
4302H-5V, 4302H-12V Series Intergrated Resistor-5 Volts and 12 Volts Operation T-1 3/4 (5mm) |
etc |
| 6 |
4302H1-12V |
4302H-5V, 4302H-12V Series Intergrated Resistor-5 Volts and 12 Volts Operation T-1 3/4 (5mm) |
etc |
| 7 |
4302H1-5V |
4302H-5V, 4302H-12V Series Intergrated Resistor-5 Volts and 12 Volts Operation T-1 3/4 (5mm) |
etc |
| 8 |
4302H3-12V |
4302H-5V, 4302H-12V Series Intergrated Resistor-5 Volts and 12 Volts Operation T-1 3/4 (5mm) |
etc |
| 9 |
4302H3-5V |
4302H-5V, 4302H-12V Series Intergrated Resistor-5 Volts and 12 Volts Operation T-1 3/4 (5mm) |
etc |
| 10 |
4302H5-12V |
4302H-5V, 4302H-12V Series Intergrated Resistor-5 Volts and 12 Volts Operation T-1 3/4 (5mm) |
etc |
| 11 |
4302H5-5V |
4302H-5V, 4302H-12V Series Intergrated Resistor-5 Volts and 12 Volts Operation T-1 3/4 (5mm) |
etc |
| 12 |
AN105 |
FETs As Voltage-Controlled Resistors |
Vishay |
| 13 |
AS233XX |
(AS Series) Semi-Precision Power Wirewound Resistor |
International Resistive |
| 14 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 15 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 16 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 17 |
BAR63-02W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
| 18 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 19 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 20 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 21 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 22 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 23 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 24 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 25 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 26 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 27 |
BAS70 |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 28 |
BAS70KFILM |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 29 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 30 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| | | |
