| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10D05 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 2 |
10D1 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 3 |
10D10 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 4 |
10D2 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 5 |
10D4 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 6 |
10D6 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 7 |
10D8 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 8 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 9 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 10 |
1N3062 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 11 |
1N3063 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 12 |
1N3064 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 13 |
1N3070 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 14 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
| 15 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
| 16 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| 17 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
| 18 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 19 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
| 20 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
| 21 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
| 22 |
1N3208R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 23 |
1N3209R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 24 |
1N3210R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 25 |
1N3212R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 26 |
1N3213R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 27 |
1N3595 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 28 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 29 |
1N3675 |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 30 |
1N3675A |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
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