| No. |
Part Name |
Description |
Manufacturer |
| 1 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 2 |
1MBI800PN-180 |
Low loss high speed switching IGBT Modules |
Fuji Electric |
| 3 |
1N3062 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 4 |
1N3063 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 5 |
1N3064 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 6 |
1N3093 |
Germanium X-band Switch |
Motorola |
| 7 |
1N3604 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 8 |
1N3605 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 9 |
1N3606 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 10 |
1N4009 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 11 |
1N4148 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 12 |
1N4148 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 13 |
1N4148 |
High-speed switching diode |
Formosa MS |
| 14 |
1N4148 |
High speed switching diode |
IPRS Baneasa |
| 15 |
1N4148 |
Silicon High Speed Switching Diode |
IPRS Baneasa |
| 16 |
1N4148 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 17 |
1N4148 |
Silicon epitaxial planar diode type, ultra high speed switching applications |
TOSHIBA |
| 18 |
1N4148W |
High Speed Switching Diode 500mW |
Micro Commercial Components |
| 19 |
1N4148WX |
High Speed Switching Diode 500mW |
Micro Commercial Components |
| 20 |
1N4149 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 21 |
1N4149 |
High speed switching diode |
IPRS Baneasa |
| 22 |
1N4149 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 23 |
1N4149 |
Silicon epitaxial planar diode, communication and industrial applications, ultra high speed switching |
TOSHIBA |
| 24 |
1N4150 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 25 |
1N4150 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 26 |
1N4151 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 27 |
1N4151 |
High speed switching diode |
IPRS Baneasa |
| 28 |
1N4151 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 29 |
1N4151 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 30 |
1N4152 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
| | | |
