| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AWT6108 |
This quad band power amplifier module is designed to support dual, tri and quad band applications. |
Anadigics Inc |
| 2 |
AWT6146 |
This quad band power amplifier module is designed to support dual, tri and quad band applications. |
Anadigics Inc |
| 3 |
AWT6146 |
This quad band power amplifier module is designed to support dual, tri and quad band applications. |
Anadigics Inc |
| 4 |
BAY67 |
Diffused silicon diode, adapted to switch RF signals |
AEG-TELEFUNKEN |
| 5 |
CA3161 |
BCD to Seven Segment Decoder/Driver |
Intersil |
| 6 |
CA3161E |
BCD to Seven Segment Decoder/Driver |
Intersil |
| 7 |
HCF4511 |
BCD TO SEVEN SEGMENT LATCH DECODER DRIVES |
ST Microelectronics |
| 8 |
HCF4511BEY |
BCD TO SEVEN SEGMENT LATCH DECODER DRIVES |
SGS Thomson Microelectronics |
| 9 |
HCF4511BEY |
BCD TO SEVEN SEGMENT LATCH DECODER DRIVES |
ST Microelectronics |
| 10 |
HCF4511BM1 |
BCD TO SEVEN SEGMENT LATCH DECODER DRIVES |
SGS Thomson Microelectronics |
| 11 |
HCF4511BM1 |
BCD TO SEVEN SEGMENT LATCH DECODER DRIVES |
ST Microelectronics |
| 12 |
HCF4511M013TR |
BCD TO SEVEN SEGMENT LATCH DECODER DRIVES |
SGS Thomson Microelectronics |
| 13 |
HCF4511M013TR |
BCD TO SEVEN SEGMENT LATCH DECODER DRIVES |
ST Microelectronics |
| 14 |
HD74LS247 |
BCD to Seven Segment Decoders/Drivers |
Hitachi Semiconductor |
| 15 |
HD74LS248 |
BCD to Seven Segment Decoders/Drivers |
Hitachi Semiconductor |
| 16 |
HD74LS249 |
BCD to Seven Segment Decoders/Drivers |
Hitachi Semiconductor |
| 17 |
LTE-4206 |
SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES |
Lite-On Technology Corporation |
| 18 |
LTE4206 |
SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES |
Lite-On Technology Corporation |
| 19 |
RE028 |
The RE028 is a Low Drop Out (LDO) voltage regulator macrocell with a fixed 4.5V output voltage, rated for loads up to 300 mA. It is designed to supply radio frequency synthesizers and used as a controller for the antenna switch. |
Atmel |
| 20 |
SMY51 |
Si-MOS Field Effect Double transistor P-Channel, with integrated gate protection diodes, source of transistor 2 is connected to substrate |
RFT |
| 21 |
TC1070 |
The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older (bipolar) voltage regulators. Total supply current is typically 50�A at full load, 20 to 60 times lower than in bipolar regulators! The devicesR |
Microchip |
| 22 |
TC1070VCT713 |
The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older (bipolar) voltage regulators. Total supply ... |
Microchip |
| 23 |
TC1071 |
The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older (bipolar) voltage regulators. Total supply current is typically 50�A at full load, 20 to 60 times lower than in bipolar regulators! The devicesR |
Microchip |
| 24 |
TC1071VCT713 |
The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older (bipolar) voltage regulators. Total supply ... |
Microchip |
| 25 |
TC1187 |
The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older (bipolar) voltage regulators. Total supply current is typically 50uA at full load, 20 to 60 times lower than in bipolar regulators! The devicesR |
Microchip |
| 26 |
TC1187VCT713 |
The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older (bipolar) voltage regulators. Total supply ... |
Microchip |
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