No. |
Part Name |
Description |
Manufacturer |
1 |
1SV102 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
2 |
1SV103 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
3 |
1SV147 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
4 |
1SV149 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
5 |
1SV242 |
Variable Capacitance Diode TV VHF Wide Band Tuning |
TOSHIBA |
6 |
ACU2109S3C |
Wideband Tuner Upconverter Data Sheet - Rev 2.4 |
Anadigics Inc |
7 |
ACU2109S3CTR |
Wideband Tuner Upconverter Data Sheet - Rev 2.4 |
Anadigics Inc |
8 |
ACU2109S3GP0 |
Wideband Tuner Upconverter Data Sheet - Rev 2.4 |
Anadigics Inc |
9 |
ACU2109S3GP1 |
Wideband Tuner Upconverter Data Sheet - Rev 2.4 |
Anadigics Inc |
10 |
AN17883A |
Headphone amplifier IC with center amplifier and tuner amplifier |
Panasonic |
11 |
BB112 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 � 8.0 V) |
Siemens |
12 |
BB512 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 � 8 V) |
Siemens |
13 |
BBY24 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
14 |
BBY25 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
15 |
BBY26 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
16 |
BBY27 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
17 |
BBY32CB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
18 |
BBY32DA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
19 |
BBY32DB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
20 |
BBY32EA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
21 |
BBY32FA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
22 |
BBY52-02W |
Varactordiodes - Silicon high Q hyperband tuning diode |
Infineon |
23 |
BBY52-02W |
Silicon High Q Hyperband Tuning Diode |
Infineon |
24 |
BBY52-02W |
Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance) |
Siemens |
25 |
BTA12 |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
26 |
BTA12-200B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
27 |
BTA12-50B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
28 |
BTA12-600BS |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
29 |
BXY22G |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
30 |
BXY22H |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
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