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Datasheets found :: 1
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 1 | W4NXD8D-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
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Datasheets found :: 1
Page:
| 1 |
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