| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AN2531/D |
Standard Space Vector Modulation with Dead-Time Correction � XOR version TPU Function Set |
Motorola |
| 2 |
DS1682 |
Total-Elapsed-Time Recorder with Alarm |
MAXIM - Dallas Semiconductor |
| 3 |
DS1682S+ |
Total-Elapsed-Time Recorder with Alarm |
MAXIM - Dallas Semiconductor |
| 4 |
DS1682S+T&R |
Total-Elapsed-Time Recorder with Alarm |
MAXIM - Dallas Semiconductor |
| 5 |
DS1682S/T&R |
Total-Elapsed-Time Recorder with Alarm |
MAXIM - Dallas Semiconductor |
| 6 |
DS1683 |
Total-Elapsed-Time and Event Recorder with Alarm |
MAXIM - Dallas Semiconductor |
| 7 |
DS1683S+ |
Total-Elapsed-Time and Event Recorder with Alarm |
MAXIM - Dallas Semiconductor |
| 8 |
DS1683S+T&R |
Total-Elapsed-Time and Event Recorder with Alarm |
MAXIM - Dallas Semiconductor |
| 9 |
IN74LV374D |
Octal D-time flip-flop; positive edge-trigger (3-state) |
INTEGRAL |
| 10 |
IN74LV374N |
Octal D-time flip-flop; positive edge-trigger (3-state) |
INTEGRAL |
| 11 |
IRS20124S |
DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION |
International Rectifier |
| 12 |
IRS20124STRPBF |
Digital Audio Driver with Discrete Dead-Time and Protection. High and Low Side Driver in a 14-Lead SOIC package |
International Rectifier |
| 13 |
ISL6745 |
Voltage-Mode Double-Ended PWM Controller with Precision Dead-Time Adjustment |
Intersil |
| 14 |
ISL78420 |
100V, 2A Peak, Half-Bridge Driver with Tri-Level PWM Input and Adjustable Dead-Time |
Intersil |
| 15 |
K4S161622D-TI/E10 |
1M x 16 SDRAM |
Samsung Electronic |
| 16 |
K4S161622D-TI/E50 |
1M x 16 SDRAM |
Samsung Electronic |
| 17 |
K4S161622D-TI/E55 |
1M x 16 SDRAM |
Samsung Electronic |
| 18 |
K4S161622D-TI/E60 |
1M x 16 SDRAM |
Samsung Electronic |
| 19 |
K4S161622D-TI/E70 |
1M x 16 SDRAM |
Samsung Electronic |
| 20 |
K4S161622D-TI/E80 |
1M x 16 SDRAM |
Samsung Electronic |
| 21 |
K6R1008C1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 22 |
K6R1008V1D-TI08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 23 |
K6R1008V1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 24 |
K6R1016C1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 25 |
K6R1016V1D-TI08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 26 |
K6R1016V1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 27 |
K6R4008C1D-TI10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 28 |
K6R4008V1D-TI08 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 29 |
K6R4008V1D-TI10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 30 |
K6R4016C1D-TI10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
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