| No. |
Part Name |
Description |
Manufacturer |
| 1 |
150D105X0006A2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
| 2 |
150D105X0010A2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
| 3 |
150D105X9006A2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
| 4 |
150D105X9010A2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
| 5 |
2SD105 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 6 |
2SD1051 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 7 |
2SD1052 |
Silicon NPN triple diffused audio frequency power transistor |
TOSHIBA |
| 8 |
2SD1052A |
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) |
TOSHIBA |
| 9 |
2SD1055 |
Medium Power Transistor 32V/ 2A |
ROHM |
| 10 |
489D105X025A32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 11 |
489D105X035B46V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 12 |
489D105X050D65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 13 |
516D105M050JL6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 14 |
516D105M100JL6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 15 |
516D105M160LL6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 16 |
516D105M200LL6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 17 |
516D105M250LM6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 18 |
516D105M315LM6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 19 |
516D105M350LM6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 20 |
516D105M400MM6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 21 |
516D105M450MM6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 22 |
ALD105 |
LD-relay. 1 form slim power relay. Nominal voltage 5 V DC. |
Matsushita Electric Works(Nais) |
| 23 |
CGRHD105-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=1A |
Comchip Technology |
| 24 |
D1053 |
METAL GATE RF SILICON FET |
SemeLAB |
| 25 |
D1053UK |
METAL GATE RF SILICON FET |
SemeLAB |
| 26 |
EFD105 |
Germanium diode |
IPRS Baneasa |
| 27 |
EFD105 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 28 |
EFD105 |
Germanium point contact diode, intended for use in medium speed switching applications |
IPRS Baneasa |
| 29 |
ERA2AED1050X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 30 |
ERA2AED1051X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
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