| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD1275 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2 |
2SD1275 |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
| 3 |
2SD1275A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 4 |
2SD1275A |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
| 5 |
CFB949 |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 |
Continental Device India Limited |
| 6 |
CFB949A |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A |
Continental Device India Limited |
| 7 |
CFB949AP |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP |
Continental Device India Limited |
| 8 |
CFB949AQ |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ |
Continental Device India Limited |
| 9 |
CFB949AR |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR |
Continental Device India Limited |
| 10 |
CFB949P |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P |
Continental Device India Limited |
| 11 |
CFB949Q |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275Q |
Continental Device India Limited |
| 12 |
CFB949R |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFD1275R |
Continental Device India Limited |
| 13 |
CFD1275 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 |
Continental Device India Limited |
| 14 |
CFD1275A |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949A |
Continental Device India Limited |
| 15 |
CFD1275AP |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP |
Continental Device India Limited |
| 16 |
CFD1275AQ |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ |
Continental Device India Limited |
| 17 |
CFD1275AR |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949AR |
Continental Device India Limited |
| 18 |
CFD1275P |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949P |
Continental Device India Limited |
| 19 |
CFD1275Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q |
Continental Device India Limited |
| 20 |
CFD1275R |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R |
Continental Device India Limited |
| 21 |
Q62702-D1275 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 22 |
SD1275 |
VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 23 |
SD1275 |
VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 24 |
SD1275-01 |
VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 25 |
SD1275-01 |
VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
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