No. |
Part Name |
Description |
Manufacturer |
1 |
ELJND12NKF |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
2 |
FQD12N20 |
200V N-Channel MOSFET |
Fairchild Semiconductor |
3 |
FQD12N20L |
200V LOGIC N-Channel MOSFET |
Fairchild Semiconductor |
4 |
FQD12N20LTF |
200V N-Channel Logic Level QFET |
Fairchild Semiconductor |
5 |
FQD12N20LTM |
200V N-Channel Logic Level QFET |
Fairchild Semiconductor |
6 |
FQD12N20LT_F085 |
200V Logic Level N-Channel MOSFET |
Fairchild Semiconductor |
7 |
FQD12N20TF |
200V N-Channel QFET |
Fairchild Semiconductor |
8 |
FQD12N20TM |
200V N-Channel QFET |
Fairchild Semiconductor |
9 |
IPD12N03L |
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL |
Infineon |
10 |
IPD12N03LB |
OptiMOS®2 - SuperSO8, SO8, DPAK |
Infineon |
11 |
MTD12N06EZL |
OBSOLETE - REPLACEMENT P/N# - NONE |
ON Semiconductor |
12 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13 |
NTD12N10 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
14 |
NTD12N10-001 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
15 |
NTD12N10-D |
Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK |
ON Semiconductor |
16 |
NTD12N10T4 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
17 |
NTD12N10T4G |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
18 |
PHD12N10E |
PowerMOS transistor |
Philips |
19 |
PHD12NQ15T |
N-channel TrenchMOS(tm) transistor |
Philips |
20 |
RFD12N06RLE |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
21 |
RFD12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
22 |
RFD12N06RLESM |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
23 |
RFD12N06RLESM |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
24 |
RFD12N06RLESM9A |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
25 |
STD12N05 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
26 |
STD12N05 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
27 |
STD12N05 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
28 |
STD12N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
29 |
STD12N05L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
30 |
STD12N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
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