| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MTD12N06EZL |
OBSOLETE - REPLACEMENT P/N# - NONE |
ON Semiconductor |
| 2 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3 |
RFD12N06RLE |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 4 |
RFD12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 5 |
RFD12N06RLESM |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 6 |
RFD12N06RLESM |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 7 |
RFD12N06RLESM9A |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 8 |
STD12N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 9 |
STD12N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 10 |
STD12N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 11 |
STD12N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 12 |
STD12N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 13 |
STD12N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
