| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD1380 |
2SD1380 |
ROHM |
| 2 |
2SD1380 |
2SD1380 |
ROHM |
| 3 |
2SD1380 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 4 |
2SD1381F |
Power Transistor (80V/ 1A) |
ROHM |
| 5 |
2SD1383K |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 6 |
2SD1383KT146B |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
| 7 |
2SD1384 |
Epitaxial Planar NPN Silicon Transistor |
ROHM |
| 8 |
2SD1385 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 9 |
AD138 |
Germanium PNP junction low-frequency power transistor |
TELEFUNKEN |
| 10 |
AD138 |
Germanium PNP junction AF small power transistor |
TELEFUNKEN |
| 11 |
AD138/50 |
Germanium PNP junction low-frequency power transistor |
TELEFUNKEN |
| 12 |
AD1380 |
Low Cost 16-Bit Sampling ADC |
Analog Devices |
| 13 |
AD1380JD |
Low Cost 16-Bit Sampling ADC |
Analog Devices |
| 14 |
AD1380KD |
Low Cost 16-Bit Sampling ADC |
Analog Devices |
| 15 |
AD1382 |
16-Bit 500 kHz Sampling ADC |
Analog Devices |
| 16 |
AD1382KD |
18V; 900mW; 16-bit 500kHz sampling ADC. For medical imaging, CAT, magnetic resonance, vibration analysis, parametric measurement unit (ATE) |
Analog Devices |
| 17 |
AD1382TD |
18V; 900mW; 16-bit 500kHz sampling ADC. For medical imaging, CAT, magnetic resonance, vibration analysis, parametric measurement unit (ATE) |
Analog Devices |
| 18 |
AD1382TD_883B |
18V; 900mW; 16-bit 500kHz sampling ADC. For medical imaging, CAT, magnetic resonance, vibration analysis, parametric measurement unit (ATE) |
Analog Devices |
| 19 |
AD1385 |
16-Bit 500 kHz Wide Temperature Range Sampling ADC |
Analog Devices |
| 20 |
AD1385KD |
16-Bit 500 kHz Wide Temperature Range Sampling ADC |
Analog Devices |
| 21 |
AD1385TD |
16-Bit 500 kHz Wide Temperature Range Sampling ADC |
Analog Devices |
| 22 |
AD1385TD/883B |
16-Bit 500 kHz Wide Temperature Range Sampling ADC |
Analog Devices |
| 23 |
BD137 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 250 hFE. Complementary BD138 |
Continental Device India Limited |
| 24 |
BD137-10 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 |
Continental Device India Limited |
| 25 |
BD137-16 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD138-16 |
Continental Device India Limited |
| 26 |
BD137-25 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 160 - 400 hFE. Complementary BD138-25 |
Continental Device India Limited |
| 27 |
BD137-6 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD138-6 |
Continental Device India Limited |
| 28 |
BD138 |
Silicon PNP Epitaxial Planar Power Transistor |
AEG-TELEFUNKEN |
| 29 |
BD138 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 30 |
BD138 |
12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 250 hFE. Complementary BD137 |
Continental Device India Limited |
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