No. |
Part Name |
Description |
Manufacturer |
1 |
2SD1616A |
NPN SILICON TRANSISTOR |
Micro Electronics |
2 |
2SD1616A |
Silicon transistor |
NEC |
3 |
2SD1616A |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
4 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
5 |
2SD1616A-T |
Silicon transistor |
NEC |
6 |
2SD1616A-T/JD |
Silicon transistor |
NEC |
7 |
2SD1616A-T/JM |
Silicon transistor |
NEC |
8 |
2SD1616A/JD |
Silicon transistor |
NEC |
9 |
2SD1616A/JM |
Silicon transistor |
NEC |
10 |
HSD1616A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
11 |
KSD1616A |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12 |
KSD1616A |
NPN (AUDIO FREQUENCY POWER AMPLIFIER MIDIUM SPEED SWITCHING) |
Samsung Electronic |
13 |
KSD1616A-G |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
14 |
KSD1616A-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
15 |
KSD1616AGBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
16 |
KSD1616AGTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
17 |
KSD1616ALBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
18 |
KSD1616ALTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
19 |
KSD1616AYBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
20 |
KSD1616AYTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
21 |
PJD1616ACT |
120V; 1A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
22 |
PJD1616ACX |
120V; 1A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
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