No. |
Part Name |
Description |
Manufacturer |
1 |
FQD19N10 |
100V N-Channel MOSFET |
Fairchild Semiconductor |
2 |
FQD19N10L |
100V LOGIC N-Channel MOSFET |
Fairchild Semiconductor |
3 |
FQD19N10LTF |
100V N-Channel Logic Level QFET |
Fairchild Semiconductor |
4 |
FQD19N10LTM |
100V N-Channel Logic Level QFET |
Fairchild Semiconductor |
5 |
FQD19N10TF |
100V N-Channel QFET |
Fairchild Semiconductor |
6 |
FQD19N10TM |
100V N-Channel QFET |
Fairchild Semiconductor |
7 |
KS58D19N |
TONE/PULSE dialer with redial |
Samsung Electronic |
8 |
STD19NE06 |
N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
9 |
STD19NE06 |
N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
ST Microelectronics |
10 |
STD19NE06L |
N-CHANNEL 60V - 0.038 OHM - 19A - TO-251/TO-252 STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
11 |
STD19NE06L |
N - CHANNEL 60V - 0.038 Ohm - 19A - TO-251/TO-252 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
12 |
STD19NE06L |
N-CHANNEL 60V - 0.038 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
ST Microelectronics |
13 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
14 |
SUD19N20-90 |
N-Channel 200-V (D-S) 175C MOSFET |
Vishay |
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