| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FQD19N10 |
100V N-Channel MOSFET |
Fairchild Semiconductor |
| 2 |
FQD19N10L |
100V LOGIC N-Channel MOSFET |
Fairchild Semiconductor |
| 3 |
FQD19N10LTF |
100V N-Channel Logic Level QFET |
Fairchild Semiconductor |
| 4 |
FQD19N10LTM |
100V N-Channel Logic Level QFET |
Fairchild Semiconductor |
| 5 |
FQD19N10TF |
100V N-Channel QFET |
Fairchild Semiconductor |
| 6 |
FQD19N10TM |
100V N-Channel QFET |
Fairchild Semiconductor |
| 7 |
STD19NE06 |
N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 8 |
STD19NE06 |
N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 9 |
STD19NE06L |
N-CHANNEL 60V - 0.038 OHM - 19A - TO-251/TO-252 STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 10 |
STD19NE06L |
N - CHANNEL 60V - 0.038 Ohm - 19A - TO-251/TO-252 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 11 |
STD19NE06L |
N-CHANNEL 60V - 0.038 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 12 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| 13 |
SUD19N20-90 |
N-Channel 200-V (D-S) 175C MOSFET |
Vishay |
| | | |
