| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD2530 |
Power Device - Power Transistors - Others |
Panasonic |
| 2 |
2SD2531 |
Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications |
TOSHIBA |
| 3 |
2SD2536 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Switching Applications Micro Motor Drive, Hammer Drive Applications |
TOSHIBA |
| 4 |
2SD2537 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 5 |
2SD2537T100V |
NPN High hFE Transistor |
ROHM |
| 6 |
2SD2538 |
Silicon NPN triple diffusion planer type Darlington(For power amplification) |
Panasonic |
| 7 |
2SD2539 |
Silicon NPN Power Transistors TO-3P(H)IS package |
Savantic |
| 8 |
2SD2539 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV |
TOSHIBA |
| 9 |
CSD25301W1015 |
P-Channel NexFET™ Power MOSFET 6-DSBGA -55 to 150 |
Texas Instruments |
| 10 |
CSD25302Q2 |
P-Channel NexFET� Power MOSFET |
Texas Instruments |
| 11 |
CSD25303W1015 |
P-Channel NexFET Power MOSFET |
Texas Instruments |
| 12 |
CSD25304W1015 |
CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA |
Texas Instruments |
| 13 |
CSD25304W1015 |
CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA |
Texas Instruments |
| 14 |
CSD25304W1015T |
CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA |
Texas Instruments |
| 15 |
CSD25304W1015T |
CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA |
Texas Instruments |
| 16 |
CSD25310Q2 |
20-V P-Channel NexFET Power MOSFET, CSD25310Q2 6-WSON -40 to 85 |
Texas Instruments |
| 17 |
CSD25310Q2 |
20-V P-Channel NexFET Power MOSFET, CSD25310Q2 6-WSON -40 to 85 |
Texas Instruments |
| 18 |
HEC100-48D2533 |
Input range:36-75 VDC;output voltage:3.3/2.5 VDC; output current:25/25 A;input current:2.44 A; 100 W dual output DC-DC converter |
Power Mate Technology |
| 19 |
HEC100-48D2533-K |
Input range:36-75 VDC;output voltage:3.3/2.5 VDC; output current:25/25 A;input current:2.44 A; 100 W dual output DC-DC converter |
Power Mate Technology |
| 20 |
HEC100-48D2533-L |
Input range:36-75 VDC;output voltage:3.3/2.5 VDC; output current:25/25 A;input current:2.44 A; 100 W dual output DC-DC converter |
Power Mate Technology |
| 21 |
HEC100-48D2533-M |
Input range:36-75 VDC;output voltage:3.3/2.5 VDC; output current:25/25 A;input current:2.44 A; 100 W dual output DC-DC converter |
Power Mate Technology |
| 22 |
HEC100-48D2533-P |
Input range:36-75 VDC;output voltage:3.3/2.5 VDC; output current:25/25 A;input current:2.44 A; 100 W dual output DC-DC converter |
Power Mate Technology |
| 23 |
HEC100-48D2533-S |
Input range:36-75 VDC;output voltage:3.3/2.5 VDC; output current:25/25 A;input current:2.44 A; 100 W dual output DC-DC converter |
Power Mate Technology |
| 24 |
ISD2532 |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations Data Sheet Body |
Winbond Electronics |
| 25 |
ISD2532 PRODUCTS |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations |
Information Storage Devices |
| 26 |
ISD2532E |
Single-chip voice record/playback device with 32 seconds duration |
Information Storage Devices |
| 27 |
ISD2532E |
SINGLE-CHIP/ MULTIPLE-MESSAGES/ VOICE RECORD/PLAYBACK DEVICE 32-/ 40-/ 48-/ AND 64-SECOND DURATION |
Winbond Electronics |
| 28 |
ISD2532EI |
Single-chip voice record/playback device with 32 seconds duration |
Information Storage Devices |
| 29 |
ISD2532P |
Single-chip voice record/playback device with 32 seconds duration |
Information Storage Devices |
| 30 |
ISD2532P |
SINGLE-CHIP/ MULTIPLE-MESSAGES/ VOICE RECORD/PLAYBACK DEVICE 32-/ 40-/ 48-/ AND 64-SECOND DURATION |
Winbond Electronics |
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