| No. |
Part Name |
Description |
Manufacturer |
| 1 |
EYGN0912QD4P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 2 |
FQD4P25 |
250V P-Channel MOSFET |
Fairchild Semiconductor |
| 3 |
FQD4P25TF |
250V P-Channel QFET |
Fairchild Semiconductor |
| 4 |
FQD4P25TM |
250V P-Channel QFET |
Fairchild Semiconductor |
| 5 |
FQD4P25TM_WS |
P-Channel QFET� MOSFET -250V, -3.1A, 2.1? |
Fairchild Semiconductor |
| 6 |
FQD4P40 |
400V P-Channel MOSFET |
Fairchild Semiconductor |
| 7 |
FQD4P40TF |
400V P-Channel QFET |
Fairchild Semiconductor |
| 8 |
FQD4P40TM |
400V P-Channel QFET |
Fairchild Semiconductor |
| 9 |
KMA2D4P20SA |
P-Ch Trench MOSFET |
Korea Electronics (KEC) |
| 10 |
KML0D4P20E |
P-Ch Trench MOSFET |
Korea Electronics (KEC) |
| 11 |
MTD4P05 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 12 |
MTD4P06 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 14 |
NTHD4P02F |
Power MOSFET and Schottky Diode |
ON Semiconductor |
| 15 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 16 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| | | |
