| No. |
Part Name |
Description |
Manufacturer |
| 1 |
EMD6T2R |
PNP+NPN Digital transistor (with built-in resistors) |
ROHM |
| 2 |
G910TD6T |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 3 |
G911TD6T |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 4 |
M58BF008B100D6T |
8 Mbit 256Kb x32 / Burst Flash Memory |
ST Microelectronics |
| 5 |
M68AW128ML55ND6T |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 6 |
M68AW128ML70ND6T |
2 MBIT (128K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7 |
M68AW256DL70ND6T |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 8 |
M68AW256ML55ND6T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 9 |
M68AW256ML70ND6T |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 10 |
M68AW256MN55ND6T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 11 |
M68AW256MN70ND6T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 12 |
M68AW512ML55ND6T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 13 |
M68AW512ML70ND6T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 14 |
M68AW512MN55ND6T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 15 |
S21MD6T |
Built-in Zero-cross Circuit Phototriac Coupler |
SHARP |
| | | |
