| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AAC143E-D8A-G-LF |
Flyback, Forward and Isolated |
Microsemi |
| 2 |
AAC243E-D8A-G-LF |
Flyback, Forward and Isolated |
Microsemi |
| 3 |
EBD11ED8ABFB |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
| 4 |
EBD11ED8ABFB |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
| 5 |
EBD11ED8ABFB-6B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
| 6 |
EBD11ED8ABFB-6B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
| 7 |
EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
| 8 |
EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
| 9 |
EBD11ED8ABFB-7B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
| 10 |
EBD11ED8ABFB-7B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
| 11 |
EBD11UD8ABFB |
1GB Unbuffered DDR SDRAM DIMM |
Elpida Memory |
| 12 |
EBD11UD8ABFB-6B |
1GB Unbuffered DDR SDRAM DIMM |
Elpida Memory |
| 13 |
EBD11UD8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM |
Elpida Memory |
| 14 |
EBD11UD8ABFB-7B |
1GB Unbuffered DDR SDRAM DIMM |
Elpida Memory |
| 15 |
FD400D8A |
RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc |
etc |
| 16 |
IMD8A |
Transistors > Complex Digital Transistors |
ROHM |
| 17 |
KM416RD8AC |
128/144Mbit RDRAM |
Samsung Electronic |
| 18 |
KM416RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 19 |
KM416RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 20 |
KM416RD8AC(DB)-RCG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 21 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 22 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 23 |
KM416RD8AC-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 24 |
KM416RD8AD |
128/144Mbit RDRAM |
Samsung Electronic |
| 25 |
KM416RD8AD-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 26 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 27 |
KM416RD8AD-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 28 |
KM416RD8AS |
Direct RDRAM |
Samsung Electronic |
| 29 |
KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package |
Samsung Electronic |
| 30 |
KM416RD8AS-RM80 |
256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| | | |
