No. |
Part Name |
Description |
Manufacturer |
1 |
3D8A-P |
DIP-8 PIN OUTLINE DRAWING PACKAGE |
TOSHIBA |
2 |
AAC143E-D8A-G-LF |
Flyback, Forward and Isolated |
Microsemi |
3 |
AAC243E-D8A-G-LF |
Flyback, Forward and Isolated |
Microsemi |
4 |
EBD11ED8ABFB |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
5 |
EBD11ED8ABFB |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
6 |
EBD11ED8ABFB-6B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
7 |
EBD11ED8ABFB-6B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
8 |
EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
9 |
EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
10 |
EBD11ED8ABFB-7B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
11 |
EBD11ED8ABFB-7B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
12 |
EBD11UD8ABFB |
1GB Unbuffered DDR SDRAM DIMM |
Elpida Memory |
13 |
EBD11UD8ABFB-6B |
1GB Unbuffered DDR SDRAM DIMM |
Elpida Memory |
14 |
EBD11UD8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM |
Elpida Memory |
15 |
EBD11UD8ABFB-7B |
1GB Unbuffered DDR SDRAM DIMM |
Elpida Memory |
16 |
FD400D8A |
RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc |
etc |
17 |
IMD8A |
Transistors > Complex Digital Transistors |
ROHM |
18 |
KM416RD8AC |
128/144Mbit RDRAM |
Samsung Electronic |
19 |
KM416RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
20 |
KM416RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
21 |
KM416RD8AC(DB)-RCG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
22 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
23 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
24 |
KM416RD8AC-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
25 |
KM416RD8AD |
128/144Mbit RDRAM |
Samsung Electronic |
26 |
KM416RD8AD-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
27 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
28 |
KM416RD8AD-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
29 |
KM416RD8AS |
Direct RDRAM |
Samsung Electronic |
30 |
KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package |
Samsung Electronic |
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