No. |
Part Name |
Description |
Manufacturer |
1 |
FD400D8C |
RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc |
etc |
2 |
KM416RD8C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
3 |
KM418RD8C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
4 |
SLI-343D8C |
EXCELED™ series |
ROHM |
5 |
SLI-343D8C3F |
EXCELED™ series |
ROHM |
6 |
STPay-JS-D8C-AC |
Contact DDA Static Java with 8Kbytes EEPROM |
ST Microelectronics |
7 |
STPay-JS-D8C-AT |
Contact DDA Static Java with 8Kbytes EEPROM |
ST Microelectronics |
8 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
10 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
12 |
XC1701LPD8C |
Configuration PROMs |
Xilinx |
13 |
XC1701PD8C |
Configuration PROMs |
Xilinx |
14 |
XC17128ELPD8C |
Configuration PROMs |
Xilinx |
15 |
XC17128EPD8C |
Configuration PROMs |
Xilinx |
16 |
XC17256ELPD8C |
Configuration PROMs |
Xilinx |
17 |
XC17256EPD8C |
Configuration PROMs |
Xilinx |
18 |
XC1736EPD8C |
Configuration PROMs |
Xilinx |
19 |
XC17512LPD8C |
Configuration PROMs |
Xilinx |
20 |
XC1765ELPD8C |
Configuration PROMs |
Xilinx |
21 |
XC1765EPD8C |
Configuration PROMs |
Xilinx |
22 |
XC17S100XLPD8C |
Spartan 3.3V one-time programmable configuration PROM. Configuration bits 781248. |
Xilinx |
23 |
XC17S150XLPD8C |
Spartan 3.3V one-time programmable configuration PROM. Configuration bits 1040128. |
Xilinx |
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