| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
| 2 |
2N1049 |
Silicon NPN Transistor PD=40W |
Motorola |
| 3 |
2N1049A |
Silicon NPN Transistor PD=40W |
Motorola |
| 4 |
2N1049B |
Silicon NPN Transistor PD=40W |
Motorola |
| 5 |
2N1049C |
Silicon NPN Transistor PD=40W |
Motorola |
| 6 |
2N1050 |
Silicon NPN Transistor PD=40W |
Motorola |
| 7 |
2N1050A |
Silicon NPN Transistor PD=40W |
Motorola |
| 8 |
2N1050B |
Silicon NPN Transistor PD=40W |
Motorola |
| 9 |
2N1050C |
Silicon NPN Transistor PD=40W |
Motorola |
| 10 |
IRFI1010 |
Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A) |
International Rectifier |
| 11 |
IRFN3710 |
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A) |
International Rectifier |
| 12 |
IRFPS43N50 |
Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A) |
International Rectifier |
| 13 |
IRFRU1205 |
Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A��) |
International Rectifier |
| 14 |
IRLI620 |
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A) |
International Rectifier |
| 15 |
MMBZ5221B |
Pd=410mW, Vz=2.4V zener diode |
MCC |
| 16 |
MMBZ5222B |
Pd=410mW, Vz=2.5V zener diode |
MCC |
| 17 |
MMBZ5223B |
Pd=410mW, Vz=2.7V zener diode |
MCC |
| 18 |
MMBZ5224B |
Pd=410mW, Vz=2.8V zener diode |
MCC |
| 19 |
MMBZ5225B |
Pd=410mW, Vz=3.0V zener diode |
MCC |
| 20 |
MMBZ5226B |
Pd=410mW, Vz=3.3V zener diode |
MCC |
| 21 |
MMBZ5227B |
Pd=410mW, Vz=3.6V zener diode |
MCC |
| 22 |
MMBZ5228B |
Pd=410mW, Vz=3.9V zener diode |
MCC |
| 23 |
MMBZ5229B |
Pd=410mW, Vz=4.3V zener diode |
MCC |
| 24 |
MMBZ5230B |
Pd=410mW, Vz=4.7V zener diode |
MCC |
| 25 |
MMBZ5231B |
Pd=410mW, Vz=5.1V zener diode |
MCC |
| 26 |
MMBZ5232B |
Pd=410mW, Vz=5.6V zener diode |
MCC |
| 27 |
MMBZ5233B |
Pd=410mW, Vz=6.0V zener diode |
MCC |
| 28 |
MMBZ5234B |
Pd=410mW, Vz=6.2V zener diode |
MCC |
| 29 |
MMBZ5235B |
Pd=410mW, Vz=6.8V zener diode |
MCC |
| 30 |
MMBZ5236B |
Pd=410mW, Vz=7.5V zener diode |
MCC |
| | | |
