| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
| 2 |
3N172 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
| 3 |
3N172 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Intersil |
| 4 |
3N172-73 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
| 5 |
3N173 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
| 6 |
3N173 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Intersil |
| 7 |
AD549SH_883B |
18V; 500mW; ultra low input bias current operational amplifier. For electrometer amplifiers, photodiode preamp, pH electrode buffer, vacuum Ion gage measurement |
Analog Devices |
| 8 |
AD822ARM |
18V; single supply, rail to rail low power FET-input Op Amp. For battery-powered precision instrumentation, photodiode preamps, active filters, 12/14-bit data acquisition systems |
Analog Devices |
| 9 |
AN5374S |
SECAM Trans-Code Processor IC for LCD TV |
Panasonic |
| 10 |
BA-5112 |
LITHIUM SULFUR DIOXIDE PRIMARY BATTERY SYSTEM |
etc |
| 11 |
BA-5112U |
LITHIUM SULFUR DIOXIDE PRIMARY BATTERY SYSTEM |
etc |
| 12 |
BAR65-02 |
Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners) |
Siemens |
| 13 |
BAR65-02W |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners) |
Siemens |
| 14 |
BAR65-07 |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-Diode Band switch for TV-tuners) |
Siemens |
| 15 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 16 |
BAS16-02W |
Silicon Switching Diode Preliminary data (For high-speed switching applications) |
Siemens |
| 17 |
BAS16-03W |
Silicon Switching Diode Preliminary data (For high-speed switching applications) |
Siemens |
| 18 |
BAS40-07W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 19 |
BUP311D |
IGBT With Antiparallel Diode Preliminary data sheet |
Infineon |
| 20 |
CRA04S |
4 or 8 Terminal Package, Wraparound Termination, Inner Electrode Protection, Flow Solderable, Automatic Placement Capability |
Vishay |
| 21 |
CRA06E |
4 or 8 Terminal Package with 2 or 4 Isolated Resistors, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability |
Vishay |
| 22 |
CRA06P |
Thick Film Resistor Array, 8 terminal package with 4 isolated resistors, Automatic placement capability, Flow solderable, Inner electrode protection, Thick film resistance element |
Vishay |
| 23 |
CRA06S |
4 or 8 Terminal Package with 2 or 4 Isolated Resistors, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability |
Vishay |
| 24 |
CRA12E AND S |
4, 8, 10, or 16 Terminal Package, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability, Choice of Isolated or Bussed Circuits |
Vishay |
| 25 |
CRCC1206 |
Choice of Dielectric Characteristics (X7R or Y5U), Wraparound Termination, Thick Film R/C Element, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability, Standard Size |
Vishay |
| 26 |
GL-166B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| 27 |
GL-166P-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| 28 |
GL-180B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| 29 |
GL-180P-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| 30 |
GL-200B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| | | |
