No. |
Part Name |
Description |
Manufacturer |
1 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
2 |
BQ24381 |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP |
Texas Instruments |
3 |
BQ24381DSGR |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
4 |
BQ24381DSGRG4 |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
5 |
BQ24381DSGT |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
6 |
BZV39-C75 |
Low noise voltage regulator diode, 75V |
SESCOSEM |
7 |
BZV39-C7V5 |
Low noise voltage regulator diode, 7.5V |
SESCOSEM |
8 |
BZX46-C75 |
Voltage regulator diode, 75V |
SESCOSEM |
9 |
BZX46-C7V5 |
Voltage regulator diode, 7.5V |
SESCOSEM |
10 |
BZX55-C75 |
Voltage regulator diode, 75V |
SESCOSEM |
11 |
BZX55-C7V5 |
Voltage regulator diode, 7.5V |
SESCOSEM |
12 |
BZX83-C7V5 |
Voltage regulator diode, 7.5V |
SESCOSEM |
13 |
BZX85-C75 |
Voltage regulator diode, 75V |
SESCOSEM |
14 |
BZX85-C7V5 |
Voltage regulator diode, 7.5V |
SESCOSEM |
15 |
CD1N4148 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
16 |
CT283 |
0.500W General purpose diode, 70.0V Vr, 0.025uA Ir |
Continental Device India Limited |
17 |
HMC373LP3 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz |
Hittite Microwave Corporation |
18 |
IR2131 |
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime in a 28-pin DIP package |
International Rectifier |
19 |
IR2131J |
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime in a mod. 44-lead PLCC package |
International Rectifier |
20 |
IR2131JTR |
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime in a mod. 44-lead PLCC package |
International Rectifier |
21 |
IR2131PBF |
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime |
International Rectifier |
22 |
IR2131S |
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime in a 28-lead SOIC package |
International Rectifier |
23 |
IR2131STR |
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime in a 28-lead SOIC package |
International Rectifier |
24 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
25 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
26 |
KM416C256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
27 |
KM416C256DT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
28 |
KM416V256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
29 |
KM416V256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
30 |
KM416V256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
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