| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N541 |
Germanium diode, detection |
SESCOSEM |
| 2 |
1N541 |
Tungsten point contact germanium diode - detection |
SESCOSEM |
| 3 |
1N542 |
Tungsten point contact germanium diode - detection, sold by matched pairs (2x1N542) |
SESCOSEM |
| 4 |
1N60 |
Tungsten point contact germanium diode - video detection |
SESCOSEM |
| 5 |
1N64 |
Tungsten point contact germanium diode - video detection |
SESCOSEM |
| 6 |
1SS106 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 7 |
1SS198 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 8 |
1SS286 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 9 |
1SS86 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 10 |
1SS88 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 11 |
2557 |
PROTECTEDQUADLOW-SIDEDRIVERWITHFAULTDETECTION&SLEEPMODE |
Allegro MicroSystems |
| 12 |
29C516E |
16-Bit Flow Through EDAC Error Detection And Correction unit |
Atmel |
| 13 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 14 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 15 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 16 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 17 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 18 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 19 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 20 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 21 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 22 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 23 |
33NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 24 |
3421 |
HALL-EFFECT/ DIRECTION-DETECTION SENSORS |
Allegro MicroSystems |
| 25 |
34NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 26 |
35NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 27 |
37NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 28 |
38NQ52 |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 29 |
38NQ52A |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 30 |
39NQ52A |
Subminiature microwave detection diode, color white |
Tesla Elektronicke |
| | | |
