No. |
Part Name |
Description |
Manufacturer |
1 |
86205A |
86205A RF Bridge, 50 Ohm, 300 kHz to 6 GHz |
Agilent (Hewlett-Packard) |
2 |
86207A |
86207A RF Bridge, 75 Ohm, 300 kHz to 3 GHz |
Agilent (Hewlett-Packard) |
3 |
CRF-22010-001 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
CREE POWER |
4 |
CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
CREE POWER |
5 |
DS1217A_128K-25 |
Nonvolatile read/write cartridge, 16K x 8, 250ns |
Dallas Semiconductor |
6 |
DS1217A_16K-25 |
Nonvolatile read/write cartridge, 2K x 8, 250ns |
Dallas Semiconductor |
7 |
DS1217A_192K-25 |
Nonvolatile read/write cartridge, 24K x 8, 250ns |
Dallas Semiconductor |
8 |
DS1217A_256K-25 |
Nonvolatile read/write cartridge, 32K x 8, 250ns |
Dallas Semiconductor |
9 |
DS1217A_64K-25 |
Nonvolatile read/write cartridge, 8K x 8, 250ns |
Dallas Semiconductor |
10 |
DS1217M1-25 |
Nonvolatile read/write cartridge, 128K x 8, 250ns |
Dallas Semiconductor |
11 |
DS1217M1_2-25 |
Nonvolatile read/write cartridge, 64K x 8, 250ns |
Dallas Semiconductor |
12 |
DS1217M2-25 |
Nonvolatile read/write cartridge, 256K x 8, 250ns |
Dallas Semiconductor |
13 |
DS1217M3-25 |
Nonvolatile read/write cartridge, 384K x 8, 250ns |
Dallas Semiconductor |
14 |
DS1217M4-25 |
Nonvolatile read/write cartridge, 512K x 8, 250ns |
Dallas Semiconductor |
15 |
ELANSC520 |
Integrated 32-Bit Microcontroller with PC/AT-Compatible Peripherals, PCI Host Bridge, and Synchronous DRAM Controller |
Advanced Micro Devices |
16 |
HIP2100 |
Driver, Half Bridge, 100V/2A Peak, High Frequency, Drives N-Channel |
Intersil |
17 |
HIP2101 |
Driver, Half Bridge, 100V/2A Peak, TTL Inputs, High Frequency, Drives N-Channel |
Intersil |
18 |
HIP5011 |
PWM Regulator, Sync Buck Half-Bridge, Complementary Drive, 7V, 17A Output |
Intersil |
19 |
ISL5416EVAL1 |
2.5V; 4-channel wideband programmable down converter. For basestation receivers: GSM/EDGE, CDMA2000, UMTS |
Intersil |
20 |
ISL5761_2IA |
210MHz; 10-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
21 |
ISL5761_2IB |
210MHz; 10-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
22 |
ISL5861_2IA |
210MHz; 3.6V; 12-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
23 |
ISL5861_2IB |
210MHz; 3.6V; 12-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
24 |
ISL5961_2IA |
3.6V; 14-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
25 |
ISL5961_2IB |
3.6V; 14-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
26 |
ISL6571 |
MOSFET Driver with Integrated FETs, Synchronous Half-Bridge, 1MHz Freq, use with HIP6301 Controller |
Intersil |
27 |
MHVIC915R2 |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier |
Motorola |
28 |
MRF18085A |
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
29 |
MW4IC2020 |
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
30 |
MW4IC2020GMBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
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