| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK1117 |
V(dss): 600V; V(dgr): 600V; V(gss): +-20V; I(d): 6A; P(d): 100W; n-MOS II |
TOSHIBA |
| 2 |
LM8325DGR8-1/NOPB |
Mobile I/O Companion Supporting Keyscan, I/O Expansion, PWM, and ACCESS.bus Host Interface 25-csBGA |
Texas Instruments |
| 3 |
LM8325DGR8X-1/NOPB |
Mobile I/O Companion Supporting Keyscan, I/O Expansion, PWM, and ACCESS.bus Host Interface 25-csBGA |
Texas Instruments |
| 4 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
| 5 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 6 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 7 |
YTFP250 |
V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications |
TOSHIBA |
| | | |
