| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AN565 |
MEDIAN-TIME-TO-FAILURE (MTF) OF A L-BAND POWER TRANSISTOR UNDER RF CONDITIONS |
SGS Thomson Microelectronics |
| 2 |
DVP-C600D |
US Model, Canadian Model, Mexican Model |
SONY |
| 3 |
HEMT-3300 |
HEMT-3300 · T-1 3/4 670 nm High Radiant Intensity Emitter |
Agilent (Hewlett-Packard) |
| 4 |
HEMT-3301 |
HEMT-3301 · 940 nm High Radiant Emitter |
Agilent (Hewlett-Packard) |
| 5 |
L6437 |
High radiant output GaAs LED with position reference hole |
Hamamatsu Corporation |
| 6 |
L6437-01 |
High radiant output GaAs LED with position reference hole |
Hamamatsu Corporation |
| 7 |
LTE-4206 |
SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES |
Lite-On Technology Corporation |
| 8 |
LTE4206 |
SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES |
Lite-On Technology Corporation |
| | | |
