| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 2 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 3 |
2SA1402 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 4 |
2SA1403 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 5 |
2SA1404 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 6 |
2SA1405 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 7 |
2SA1406 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 8 |
2SA1407 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 9 |
2SC3596 |
NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 10 |
2SC3597 |
NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 11 |
2SC3598 |
NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 12 |
2SC3599 |
NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 13 |
60EPU06 |
600V 60A Ultra-Fast Discrete Diode in a modified TO-247AC package |
International Rectifier |
| 14 |
AB-016 |
BOOST AMPLIFIER OUTPUT SWING WITH SIMPLE MODIFICATION |
Burr Brown |
| 15 |
CODIFICATION |
Allocating commercial codes to I.P.R.S. products |
IPRS Baneasa |
| 16 |
DD50R |
Ultrahigh-Difinition Display Diode Diffused Junction Type Sillicon Diode |
SANYO |
| 17 |
EBT156 |
Single Readout, Dip Solder, Eyelet and Wire Wrap Termination, Modified Tuning Fork Contacts, Polarization On or Between Contact Positions, Polarizing Key is Reinforced Nylon, Protected Entry |
Vishay |
| 18 |
LTE-2871 |
GaAlAs T-1 3/4 Modified Infrared Emitting Diode |
Lite-On Technology Corporation |
| 19 |
MC68HC705B16CFN |
8-bit single chip microcomputer, 16K bytes EPROM, increased RAM, self-check replaced by bootstrap firmware, modified power-on reset routine |
Motorola |
| 20 |
MC68HC705B16CFU |
8-bit single chip microcomputer, 16K bytes EPROM, increased RAM, self-check replaced by bootstrap firmware, modified power-on reset routine |
Motorola |
| 21 |
MC68HC705B16FN |
8-bit single chip microcomputer, 16K bytes EPROM, increased RAM, self-check replaced by bootstrap firmware, modified power-on reset routine |
Motorola |
| 22 |
MC68HC705B16FU |
8-bit single chip microcomputer, 16K bytes EPROM, increased RAM, self-check replaced by bootstrap firmware, modified power-on reset routine |
Motorola |
| 23 |
MC68HC705B16VFN |
8-bit single chip microcomputer, 16K bytes EPROM, increased RAM, self-check replaced by bootstrap firmware, modified power-on reset routine |
Motorola |
| 24 |
MC68HC705B16VFU |
8-bit single chip microcomputer, 16K bytes EPROM, increased RAM, self-check replaced by bootstrap firmware, modified power-on reset routine |
Motorola |
| 25 |
MCR649P-1 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-3 Modified, 25V |
Motorola |
| 26 |
MCR649P-2 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-3 Modified, 50V |
Motorola |
| 27 |
MCR649P-3 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-3 Modified, 100V |
Motorola |
| 28 |
MCR649P-4 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-3 Modified, 200V |
Motorola |
| 29 |
MCR649P-5 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-3 Modified, 300V |
Motorola |
| 30 |
MCR649P-6 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-3 Modified, 400V |
Motorola |
| | | |
