| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SS361UDJ-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 2 |
BAS116UDJ-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 3 |
DC0150ADJ-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 4 |
DC0150BDJ-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 5 |
DMC2990UDJ-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 6 |
DMC2990UDJ-7B |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 7 |
DMC31D5UDJ-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 8 |
DMC31D5UDJ-7B |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 9 |
DMN26D0UDJ-7 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 10 |
DMN2990UDJ-7 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 11 |
DMP210DUDJ-7 |
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 12 |
DN0150ADJ-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 13 |
DN0150BDJ-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 14 |
DP0150ADJ-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 15 |
DP0150BDJ-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 16 |
DST3904DJ-7 |
40V DUAL NPN SURFACE MOUNT TRANSISTOR |
Diodes |
| 17 |
DST3906DJ-7 |
DUAL 40V PNP SURFACE MOUNT TRANSISTOR |
Diodes |
| 18 |
DST847BDJ-7 |
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 19 |
DST857BDJ-7 |
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 20 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 21 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
| 22 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 23 |
KM416V256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
| 24 |
KM41C4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 25 |
KM41V4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
| 26 |
KM44C1000DJ-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 27 |
KM44V1000DJ-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 28 |
QSG0115UDJ-7 |
DUAL COMMON CATHODE SCHOTTKY DIODE |
Diodes |
| 29 |
TMS416409ADJ-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
| 30 |
TMS417409ADJ-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
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