| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AM186CC/CH/CU |
Am186CC/CH/CU User's Manual Amendment |
Advanced Micro Devices |
| 2 |
AM186CC/CH/CU |
Am186CC/CH/CU Microcontrollers Register Set Manual Amendment |
Advanced Micro Devices |
| 3 |
AN1316 |
EVALUATION OF THE NEW HIGH VOLTAGE MDMESH(TM) VERSUS STANDARD MOSFETS |
SGS Thomson Microelectronics |
| 4 |
AN1485 |
MDMESH(TM) PERFORMANCE EVALUATION IN A CONTINUOUS MODE PFC BOOST CONVERTER |
SGS Thomson Microelectronics |
| 5 |
AZ832-2C-12DME |
Nominal coil VCD: 12; polarised DIP relay single side stable |
ZETTLER electronics |
| 6 |
AZ832-2C-24DME |
Nominal coil VCD: 24; polarised DIP relay single side stable |
ZETTLER electronics |
| 7 |
AZ832-2C-3DME |
Nominal coil VCD: 3; polarised DIP relay single side stable |
ZETTLER electronics |
| 8 |
AZ832-2C-48DME |
Nominal coil VCD: 48; polarised DIP relay single side stable |
ZETTLER electronics |
| 9 |
AZ832-2C-5DME |
Nominal coil VCD: 5; polarised DIP relay single side stable |
ZETTLER electronics |
| 10 |
AZ832-2C-6DME |
Nominal coil VCD: 6; polarised DIP relay single side stable |
ZETTLER electronics |
| 11 |
AZ832-2C-9DME |
Nominal coil VCD: 9; polarised DIP relay single side stable |
ZETTLER electronics |
| 12 |
C7190 |
Electron Bombardment CCD Cameras |
Hamamatsu Corporation |
| 13 |
C7190-11W |
Electron Bombardment CCD Cameras |
Hamamatsu Corporation |
| 14 |
C7190-12W |
Electron Bombardment CCD Cameras |
Hamamatsu Corporation |
| 15 |
C7190-13W |
Electron Bombardment CCD Cameras |
Hamamatsu Corporation |
| 16 |
C7190-21 |
Electron Bombardment CCD Cameras |
Hamamatsu Corporation |
| 17 |
C7190-23 |
Electron Bombardment CCD Cameras |
Hamamatsu Corporation |
| 18 |
CMX869 |
PRODUCT DATA AMENDMENT |
CML |
| 19 |
DME150 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
| 20 |
DME150 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 21 |
DME150 |
150 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
| 22 |
DME150 |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 23 |
DME150-2 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
| 24 |
DME150-3 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
| 25 |
DME1737 |
SUPER I/O WITH TEMPERATURE |
SMSC Corporation |
| 26 |
DME1737-NR |
SUPER I/O WITH TEMPERATURE |
SMSC Corporation |
| 27 |
DME20101 |
Bipolar Transistors |
Panasonic |
| 28 |
DME20102 |
Bipolar Transistors |
Panasonic |
| 29 |
DME2029-000 |
Beam-Lead Bridge Quad, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band S, C |
Skyworks Solutions |
| 30 |
DME2029-225 |
Beam-Lead Bridge Quad, N-Type Low, Medium, High Drive Schottky Diodes |
Skyworks Solutions |
| | | |
