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Datasheets for DRAM

Datasheets found :: 12163
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 -7L 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM Mitsubishi Electric Corporation
2 -8 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM Mitsubishi Electric Corporation
3 -8L 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM Mitsubishi Electric Corporation
4 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
5 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
6 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
7 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
8 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
9 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
10 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
11 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
12 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
13 256MBDDRSDRAM DDRSDRAMSpecificationVersion0.3 Samsung Electronic
14 256MBDDRSDRAM DDRSDRAMSpecificationVersion0.3 Samsung Electronic
15 28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY Intel
16 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
17 3DSD1280-883D-S 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
18 3DSD1280-PROTO 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
19 42S16800A 16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution Inc
20 4X16E43V 4 MEG x 16 EDO DRAM etc
21 4X16E83V 4 MEG x 16 EDO DRAM etc
22 4X16E83VTW-6 4 MEG x 16 EDO DRAM etc
23 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
24 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
25 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
26 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
27 54S416T 1M x 4 Banks x 16 BITS SDRAM Ceramate
28 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
29 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
30 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate


Datasheets found :: 12163
Page: | 1 | 2 | 3 | 4 | 5 |



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