No. |
Part Name |
Description |
Manufacturer |
1 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
2 |
HYB39S256160DTL-6 |
256 MBit Synchronous DRAM |
Infineon |
3 |
HYB39S256160DTL-6 |
256-MBit Synchronous DRAM |
Infineon |
4 |
HYB39S256160DTL-7 |
256-MBit Synchronous DRAM |
Infineon |
5 |
HYB39S256160DTL-7 |
256 MBit Synchronous DRAM |
Infineon |
6 |
HYB39S256160DTL-75 |
256-MBit Synchronous DRAM |
Infineon |
7 |
HYB39S256160DTL-75 |
256 MBit Synchronous DRAM |
Infineon |
8 |
HYB39S256160DTL-8 |
256-MBit Synchronous DRAM |
Infineon |
9 |
HYB39S256160DTL-8 |
256 MBit Synchronous DRAM |
Infineon |
10 |
HYB39S256400DTL-6 |
256-MBit Synchronous DRAM |
Infineon |
11 |
HYB39S256400DTL-7 |
256-MBit Synchronous DRAM |
Infineon |
12 |
HYB39S256400DTL-75 |
256-MBit Synchronous DRAM |
Infineon |
13 |
HYB39S256400DTL-8 |
256-MBit Synchronous DRAM |
Infineon |
14 |
HYB39S256800DTL-6 |
256-MBit Synchronous DRAM |
Infineon |
15 |
HYB39S256800DTL-6 |
256 MBit Synchronous DRAM |
Infineon |
16 |
HYB39S256800DTL-7 |
256 MBit Synchronous DRAM |
Infineon |
17 |
HYB39S256800DTL-7 |
256-MBit Synchronous DRAM |
Infineon |
18 |
HYB39S256800DTL-75 |
256-MBit Synchronous DRAM |
Infineon |
19 |
HYB39S256800DTL-75 |
256 MBit Synchronous DRAM |
Infineon |
20 |
HYB39S256800DTL-8 |
256-MBit Synchronous DRAM |
Infineon |
21 |
HYB39S256800DTL-8 |
256 MBit Synchronous DRAM |
Infineon |
22 |
KM416C254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
23 |
KM416C254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
24 |
KM416C254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
25 |
KM416V254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
26 |
KM416V254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
27 |
KM416V254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
28 |
KM44C1000DTL-5 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
29 |
KM44C1000DTL-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
30 |
KM44C1000DTL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
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