No. |
Part Name |
Description |
Manufacturer |
1 |
CM350DU-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
2 |
CM350DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
3 |
CM350DU-5F |
Trench Gate Design Dual IGBTMOD�� 350 Amperes/250 Volts |
Powerex Power Semiconductors |
4 |
CM400DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
6 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
7 |
CM600DU-5F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
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