No. |
Part Name |
Description |
Manufacturer |
1 |
28LV256JC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
2 |
28LV256JI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
3 |
28LV256JM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
4 |
28LV256PC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
5 |
28LV256PI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
6 |
28LV256PM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
7 |
28LV256SC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
8 |
28LV256SI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
9 |
28LV256SM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
10 |
28LV256TC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
11 |
28LV256TI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
12 |
28LV256TM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
13 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
14 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
15 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
16 |
3EZ300D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 300 V. 1% tolerance. |
Motorola |
17 |
3EZ300D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 300 V. 10% tolerance. |
Motorola |
18 |
3EZ300D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 300 V. 2% tolerance. |
Motorola |
19 |
3EZ300D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 300 V. |
Motorola |
20 |
ADP5023 |
Dual 3 MHz, 800 mA Buck Regulator with One 300 mA LDO |
Analog Devices |
21 |
ADP5024 |
Dual 3 MHz, 1200 mA Buck Regulators with One 300 mA LDO |
Analog Devices |
22 |
BYT28 SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
23 |
BYT28B SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
24 |
BYT28F SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
25 |
BYV29 SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
26 |
BYV29B SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
27 |
BYV29F SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
28 |
CM300DU-12H |
Dual IGBTMOD�� U-Series Module 300 Amperes/600 Volts |
Powerex Power Semiconductors |
29 |
CS641230 |
Fast Recovery Single Diode Module 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
30 |
ES2F |
Surface Mount Ultrafast Plastic Rectifier, Forward Current 2.0 A, Reverse Recovery Time 35 ns, Reverse Voltage 300 to 400 V |
Vishay |
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