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Datasheets for E 450

Datasheets found :: 40
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2 AQW214AZ PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 450 V, load current 100 mA. Surface-mount terminal. Tape and reel packing style. Matsushita Electric Works(Nais)
3 C784 Phase Control SCR 1650 Amperes Average 4500 Volts Powerex Power Semiconductors
4 C784CM Phase Control SCR 1650 Amperes Average 4500 Volts Powerex Power Semiconductors
5 C784CN Phase Control SCR 1650 Amperes Average 4500 Volts Powerex Power Semiconductors
6 C784DB Phase Control SCR 1650 Amperes Average 4500 Volts Powerex Power Semiconductors
7 C784DD Phase Control SCR 1650 Amperes Average 4500 Volts Powerex Power Semiconductors
8 C784DE Phase Control SCR 1650 Amperes Average 4500 Volts Powerex Power Semiconductors
9 C784DP Phase Control SCR 1650 Amperes Average 4500 Volts Powerex Power Semiconductors
10 IRF421 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
11 IRF423 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
12 IRF431 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
13 IRF433 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
14 IRF451 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
15 IRF453 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
16 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
17 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
18 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
19 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
20 M57788H MITSUBISHI RF POWER MODULE 450-470MHz, 12.5V, 40W, FM MOBILE RADIO Mitsubishi Electric Corporation
21 M57788HR MITSUBISHI RF POWER MODULE 450-470MHz, 13.5V, 47W, FM MOBILE RADIO Mitsubishi Electric Corporation
22 M67799HA RF POWER MODULE 450-470MHz, 9.6V, 7.5W, FM PORTABLE RADIO Mitsubishi Electric Corporation
23 M68710H RF POWER MODULE 450-470MHz, 6V, 2W, FM PORTABLE RADIO Mitsubishi Electric Corporation
24 M68769H RF POWER MODULE 450-490MHz, 12.5V, 45W, FM MOBILE RADIO Mitsubishi Electric Corporation
25 MAX2370 Complete 450MHz Quadrature Transmitter MAXIM - Dallas Semiconductor
26 MAX2370ETM Complete 450MHz Quadrature Transmitter MAXIM - Dallas Semiconductor
27 MAX2370ETM+ Complete 450MHz Quadrature Transmitter MAXIM - Dallas Semiconductor
28 MAX2370ETM+T Complete 450MHz Quadrature Transmitter MAXIM - Dallas Semiconductor
29 NTE5820 Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. NTE Electronics
30 NTE5821 Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. NTE Electronics


Datasheets found :: 40
Page: | 1 | 2 |



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