No. |
Part Name |
Description |
Manufacturer |
1 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
2 |
AQW214AZ |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 450 V, load current 100 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
3 |
C784 |
Phase Control SCR 1650 Amperes Average 4500 Volts |
Powerex Power Semiconductors |
4 |
C784CM |
Phase Control SCR 1650 Amperes Average 4500 Volts |
Powerex Power Semiconductors |
5 |
C784CN |
Phase Control SCR 1650 Amperes Average 4500 Volts |
Powerex Power Semiconductors |
6 |
C784DB |
Phase Control SCR 1650 Amperes Average 4500 Volts |
Powerex Power Semiconductors |
7 |
C784DD |
Phase Control SCR 1650 Amperes Average 4500 Volts |
Powerex Power Semiconductors |
8 |
C784DE |
Phase Control SCR 1650 Amperes Average 4500 Volts |
Powerex Power Semiconductors |
9 |
C784DP |
Phase Control SCR 1650 Amperes Average 4500 Volts |
Powerex Power Semiconductors |
10 |
IRF421 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
11 |
IRF423 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
12 |
IRF431 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
13 |
IRF433 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
14 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
15 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
16 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
17 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
18 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
19 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
20 |
M57788H |
MITSUBISHI RF POWER MODULE 450-470MHz, 12.5V, 40W, FM MOBILE RADIO |
Mitsubishi Electric Corporation |
21 |
M57788HR |
MITSUBISHI RF POWER MODULE 450-470MHz, 13.5V, 47W, FM MOBILE RADIO |
Mitsubishi Electric Corporation |
22 |
M67799HA |
RF POWER MODULE 450-470MHz, 9.6V, 7.5W, FM PORTABLE RADIO |
Mitsubishi Electric Corporation |
23 |
M68710H |
RF POWER MODULE 450-470MHz, 6V, 2W, FM PORTABLE RADIO |
Mitsubishi Electric Corporation |
24 |
M68769H |
RF POWER MODULE 450-490MHz, 12.5V, 45W, FM MOBILE RADIO |
Mitsubishi Electric Corporation |
25 |
MAX2370 |
Complete 450MHz Quadrature Transmitter |
MAXIM - Dallas Semiconductor |
26 |
MAX2370ETM |
Complete 450MHz Quadrature Transmitter |
MAXIM - Dallas Semiconductor |
27 |
MAX2370ETM+ |
Complete 450MHz Quadrature Transmitter |
MAXIM - Dallas Semiconductor |
28 |
MAX2370ETM+T |
Complete 450MHz Quadrature Transmitter |
MAXIM - Dallas Semiconductor |
29 |
NTE5820 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. |
NTE Electronics |
30 |
NTE5821 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. |
NTE Electronics |
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