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Datasheets for E 50

Datasheets found :: 888
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1N3600 High conductance ultra fast diode. Working inverse voltage 50 V. Fairchild Semiconductor
2 1N5391G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. Jinan Gude Electronic Device
3 1N5391G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. Jinan Gude Electronic Device
4 1S920 General purpose diode. Working inverse voltage 50 V. Fairchild Semiconductor
5 ADCH-80 RF Choke 50 MHz to 10000 MHz Mini-Circuits
6 AM100S 1.0 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. Comchip Technology
7 AM150S 1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. Comchip Technology
8 ARZ140M05 RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. Matsushita Electric Works(Nais)
9 ARZ140M12 RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. Matsushita Electric Works(Nais)
10 ARZ140M24 RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. Matsushita Electric Works(Nais)
11 ARZ220M05 RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. Matsushita Electric Works(Nais)
12 ARZ220M12 RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. Matsushita Electric Works(Nais)
13 ARZ220M24 RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. Matsushita Electric Works(Nais)
14 BGA310 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) Siemens
15 BGA312 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) Siemens
16 BGA318 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) Siemens
17 BGA420 Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) Siemens
18 BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) Siemens
19 BYV32-100 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
20 BYV32-150 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
21 BYV32-200 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
22 BYV32-50 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
23 BYVB32-100 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
24 BYVB32-150 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
25 BYVB32-200 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
26 BYVB32-50 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
27 BYVF32-100 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
28 BYVF32-150 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
29 BYVF32-200 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay
30 BYVF32-50 Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V Vishay


Datasheets found :: 888
Page: | 1 | 2 | 3 | 4 | 5 |



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