| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ100 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE100 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE100C |
Transient voltage suppressor. 1500 W. Breakdown voltage 90.0 V(min), 110 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
15041-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 90VDC |
NTE Electronics |
| 5 |
1N3272 |
Rectifier Diode 900V 160A |
Motorola |
| 6 |
1N3272 |
Diode 900V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
| 7 |
1N3368 |
Rectifier Diode 900V 3A |
Motorola |
| 8 |
1N3637 |
Rectifier Diode 900V |
Motorola |
| 9 |
1N4014 |
Rectifier Diode 900V 12A |
Motorola |
| 10 |
1N4055 |
Rectifier Diode 900V |
Motorola |
| 11 |
1N4055 |
Diode 900V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
| 12 |
1N5125 |
Zener Diode 90V 3W |
Motorola |
| 13 |
1N67A |
Diode 90V 0.05A |
New Jersey Semiconductor |
| 14 |
1N855 |
Rectifier Diode 900V |
Motorola |
| 15 |
1N866 |
Rectifier Diode 900V |
Motorola |
| 16 |
1N877 |
Rectifier Diode 900V |
Motorola |
| 17 |
1N888 |
Rectifier Diode 900V |
Motorola |
| 18 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 19 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 20 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 21 |
3VR90 |
3 Watt Epoxy Silicon Zener Diode 90V |
Transitron Electronic |
| 22 |
600S-N003 |
Input voltage 90-130 VAC;output voltage 3.3 VDC;output current:100 A; 600 W enclosed parallel power supply |
FranMar International |
| 23 |
600S-N005 |
Input voltage 90-130 VAC;output voltage 5 VDC;output current:100 A; 600 W enclosed parallel power supply |
FranMar International |
| 24 |
600S-N012 |
Input voltage 90-130 VAC;output voltage 12 VDC;output current:50 A; 600 W enclosed parallel power supply |
FranMar International |
| 25 |
600S-N015 |
Input voltage 90-130 VAC;output voltage 15 VDC;output current:40 A; 600 W enclosed parallel power supply |
FranMar International |
| 26 |
600S-N024 |
Input voltage 90-130 VAC;output voltage 24 VDC;output current:25 A; 600 W enclosed parallel power supply |
FranMar International |
| 27 |
600S-N048 |
Input voltage 90-130 VAC;output voltage 48 VDC;output current:12 A; 600 W enclosed parallel power supply |
FranMar International |
| 28 |
AS29F040-90LC |
5V 512K x 8 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
| 29 |
AS29F040-90LI |
5V 512K x 8 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
| 30 |
AS29F040-90TC |
5V 512K x 8 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
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