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Datasheets for E 900

Datasheets found :: 32
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 1N3272 Rectifier Diode 900V 160A Motorola
2 1N3272 Diode 900V 275A 2-Pin DO-9 New Jersey Semiconductor
3 1N3368 Rectifier Diode 900V 3A Motorola
4 1N3637 Rectifier Diode 900V Motorola
5 1N4014 Rectifier Diode 900V 12A Motorola
6 1N4055 Rectifier Diode 900V Motorola
7 1N4055 Diode 900V 275A 2-Pin DO-9 New Jersey Semiconductor
8 1N855 Rectifier Diode 900V Motorola
9 1N866 Rectifier Diode 900V Motorola
10 1N877 Rectifier Diode 900V Motorola
11 1N888 Rectifier Diode 900V Motorola
12 2SK3077 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA
13 2SK3078 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA
14 2SK3079 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA
15 BLV90SL UHF Power NPN Transistor designed for use in mobile radio transmitters in the 900 MHz band Philips
16 DRR49 Silicon Fast Recovery Rectifier Diode 900V IPRS Baneasa
17 MRF9100 MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs Motorola
18 MRF9100R3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFET Freescale (Motorola)
19 MRF9100R3 GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs Motorola
20 MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFET Freescale (Motorola)
21 MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs Motorola
22 MRT-LDE 900V/3000A Three-phase rectifier assemblies for diesel-electrical locomotives IPRS Baneasa
23 MRT-LDE 900V/3000A Three-phase rectifier assemblies for diesel-electrical locomotives IPRS Baneasa
24 MRT-LDE 900V/4500A Three-phase rectifier assemblies for diesel-electrical locomotives IPRS Baneasa
25 MUR1100E ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS Motorola
26 MUR190E ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS Motorola
27 PHM8001 MOSFET MODULE Single 900A/150A Nihon
28 SD1400-03 24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range SGS Thomson Microelectronics
29 SD1495-03 24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz SGS Thomson Microelectronics
30 STR-F6672 Off-line quasi-resonant flyback switching regulator, drain-source voltage 900V Allegro MicroSystems


Datasheets found :: 32
Page: | 1 | 2 |



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